Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As Barnard, J. A. ; Wood, C. E. C. ; Eastman, L. F. Abstract Publication: IEEE Electron Device Letters Pub Date: October 1982 DOI: 10.1109/EDL.1982.25583 Bibcode: 1982IEDL....3..318B