Long-term transient radiation-resistant GaAs FET's
Abstract
The amplitude of long term, pulse-radiation-induced transients in ion implanted GaAs FET's has been reduced by up to two orders of magnitude by the addition of a deep buried p-layer beneath the active n-layer. The p-layer was formed by ion implantation of Be to depth of 0.8 micrometer below the Si implanted n-active channel. Backgating was also greatly reduced as indicated by a much smaller amplitude transient response following application of a positivy gate pulse an; by the absence of light sensitivity and looping in the current/voltage (I-V) characteristics.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1982
- DOI:
- 10.1109/EDL.1982.25556
- Bibcode:
- 1982IEDL....3..248A
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Long Term Effects;
- Radiation Tolerance;
- Transient Response;
- Photosensitivity;
- Silicon;
- Temperature Dependence;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering