Epitaxial-diffusion silicon photoelectric cells of p/+/-n-n/+/ type
Abstract
Results are presented on the manufacture and properties of solar cells based on rejected silicon epitaxial n-n(+) structures. A regression model is described which makes it possible to predict the efficiency of these cells as a function of the parameters of the initial structures. Results show that autoepitaxial silicon structures that have been rejected as microelectronic components can be used to manufacture ground-based solar cells of sufficiently high efficiency.
- Publication:
-
Geliotekhnika
- Pub Date:
- 1982
- Bibcode:
- 1982Gelio...2....3A
- Keywords:
-
- Epitaxy;
- P-N Junctions;
- Photoelectric Cells;
- Solar Cells;
- Surface Diffusion;
- Energy Conversion Efficiency;
- Energy Technology;
- Mathematical Models;
- Regression Analysis;
- Solar Energy Conversion;
- Temperature Dependence;
- Energy Production and Conversion