Semicylindrical Zn-diffused stripe GaAlAs laser diodes with very low threshold currents
Abstract
Semicylindrical Zn-diffused stripe (SCD) GaAlAs lasers with a very narrow current-confining stripe and sufficient refractive-index step along the active layer are described. They have the lowest threshold current among this type of device previously reported. The devices having a 200 micrometer cavity length showed a CW threshold current of only 22 mA at 25 C and 45 mA at 105 C. Sufficient current confinement made it possible to operate at temperatures up to 165 C.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1982
- DOI:
- 10.1049/el:19820580
- Bibcode:
- 1982ElL....18..853H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Planar Structures;
- Semiconducting Films;
- Threshold Currents;
- Emission Spectra;
- Liquid Phase Epitaxy;
- Surface Diffusion;
- Thermal Diffusion;
- Thin Films;
- Vapor Deposition;
- Zinc;
- Lasers and Masers