Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers
Abstract
Ultra-low-threshold semiconductor diode lasers were fabricated by forming buried heterostructures from MBE-grown graded-index waveguide, separate-confinement heterostructure (GRIN-SCH) wafers. CW threshold currents as low as 2.5 mA for 250 micrometer cavity length, output power as high as 20 mW/mirror and external quantum efficiency as high as 80% were obtained.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1982
- DOI:
- Bibcode:
- 1982ElL....18..845T
- Keywords:
-
- Continuous Wave Lasers;
- Gradient Index Optics;
- Integrated Optics;
- Optical Waveguides;
- Semiconductor Lasers;
- Threshold Currents;
- Heterojunction Devices;
- Laser Outputs;
- Molecular Beam Epitaxy;
- Quantum Efficiency;
- Wafers;
- Lasers and Masers