High-quantum-efficiency low-threshold microcleaved Al/x/Ga/1-x/As lasers
Abstract
Buried-heterostructure lasers with microcleaved mirrors have been fabricated with lengths varying from 40 to 100 microns. These lasers have thresholds as low as 7 mA and differential quantum efficiencies as high as 60%. They also show essentially single-longitudinal-mode operation for currents 25% above threshold.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1982
- DOI:
- 10.1049/el:19820469
- Bibcode:
- 1982ElL....18..690L
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Laser Outputs;
- Semiconductor Lasers;
- Laser Modes;
- Quantum Efficiency;
- Thresholds;
- Lasers and Masers