Monte-Carlo simulation of space-charge injection FET
Abstract
Results of Monte-Carlo simulation of a new type of transistor, the space charge injection FET, are reported. Owing to the use of submicron undoped active regions, it seems possible to achieve low values of gate capacitance associated with high values of transconductance leading to a gain-bandwidth product close to the submillimetric wavelength range.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1982
- DOI:
- 10.1049/el:19820456
- Bibcode:
- 1982ElL....18..670F
- Keywords:
-
- Carrier Injection;
- Computerized Simulation;
- Field Effect Transistors;
- Monte Carlo Method;
- Space Charge;
- Bandwidth;
- Capacitance;
- Performance Prediction;
- Power Gain;
- Electronics and Electrical Engineering