Monolithic 2-20 GHz GaAs travelling-wave amplifier
Abstract
A two-stage monolithic GaAs traveling-wave amplifier operating in the frequency range 2-20 GHz with 12 dB flat gain is reported. A schematic circuit diagram for the amplifier is given, together with a description of the circuit components. Each stage makes use of four 150-micron FETs. Since each section is well matched for the 40-ohm system, no complicated interstage matching circuitry is required. The design includes full dc gate and drain bias circuitry. It is noted that gate and drain bias circuits serve a second function of providing the optimum gate and drain line complex load impedances over the complete design band. Here, both stages are biased from the same gate and drain bias ports. The dc blocking capacitors are included in series along with the drain output RF lines to allow direct cascading of individual chips.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1982
- DOI:
- 10.1049/el:19820409
- Bibcode:
- 1982ElL....18..596A
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Traveling Wave Amplifiers;
- Capacitors;
- Chips (Electronics);
- Frequency Response;
- Impedance Matching;
- Performance Tests;
- Superhigh Frequencies;
- Electronics and Electrical Engineering