Stable monolithic GaAs FET oscillator
Abstract
A monolithic X-band GaAs FET oscillator has been developed. Passive circuit components are lumped capacitors and inductors on semi-insulating GaAs; the chip size is 1.2 x 1.4 sq mm. Stabilized with a Ba2Ti9O20 dielectric resonator, the oscillator delivers more than 30 mW output power at 10.8 GHz with a maximum chip efficiency of 20 percent. The frequency drift is better than 1 x 10 to the -6th/K from -20 C to 80 C.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1982
- DOI:
- Bibcode:
- 1982ElL....18..345T
- Keywords:
-
- Energy Conversion Efficiency;
- Field Effect Transistors;
- Frequency Stability;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Oscillators;
- Capacitors;
- Chips (Electronics);
- Inductors;
- Lc Circuits;
- Superhigh Frequencies;
- Electronics and Electrical Engineering