High resistivity molecular beam epitaxial AlGaAs for device applications
Abstract
High resistivity epitaxial layers of AlxGa1-xAs have been produced by molecular beam epitaxy. These layers have been incorporated, as a buffer layer, in the fabrication of GaAs MESFETs and the results are discussed. Device analysis includes an assortment of low frequency and DC measurements as well as RF measurements.
- Publication:
-
Final Report
- Pub Date:
- May 1981
- Bibcode:
- 1981ric..reptQ....H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Molecular Beam Epitaxy;
- Electrical Resistance;
- Miniature Electronic Equipment;
- Wafers;
- Atomic and Molecular Physics