Thin-film GaAs solar cells
Abstract
GaAs solar cells using an n(+)/p/p(+) structure have been fabricated which show conversion efficiencies of 21% (AM1) on single-crystal GaAs and Ge substrates. The GaAs solar cells were prepared on Ge-coated Si substrates and thin single-crystal GaAs cells were prepared on reusable GaAs substrates in order to lower the cost of the cells. Solar cells with 12% efficiencies have been produced by depositing heteroepitaxial Ge films on Si substrates, and then growing epitaxial GaAs layers on these films. The CLEFT process has been used to separate single-crystal GaAs layers as thin as 5 microns from reusable GaAs substrates. In addition, a 17% (AM1) GaAs solar cell, only 10 microns thick and bonded to a glass substrate, has been fabricated. It is concluded that these thin-film techniques eliminate the cost and availability of GaAs as major obstacles to the utilization of GaAs solar cells.
- Publication:
-
15th Photovoltaic Specialists Conference
- Pub Date:
- 1981
- Bibcode:
- 1981pvsp.conf..666F
- Keywords:
-
- Energy Conversion Efficiency;
- Epitaxy;
- Gallium Arsenides;
- P-N Junctions;
- Solar Cells;
- Thin Films;
- Cost Effectiveness;
- Energy Technology;
- Fabrication;
- Germanium;
- Single Crystals;
- Energy Production and Conversion