Properties of semitransparent films of low work function metals for MIS solar cells
Abstract
In an attempt to improve the efficiency of the MIS junction having the continuous layer approach, alternative barrier metals of low work function (Be, Hf, Sc, Y) are investigated. In addition to the high induced barriers and high open circuit voltages (565 mV at AM1 of cells with Sc and p-type Si of 6 ohm-cm) the results of the investigations of the important optical and electrical properties of thin films on quartz substrates are shown to hold promise for potential high short circuit current densities for cells formed with these alternative metals. The spectral dependence and thickness dependence of the transmittances, as well as the thickness dependence of the sheet resistances, are measured. Data for the reflectance and an approximate internal transmittance are given. The reactivity of the metal films is found to increase from Al, Hf, Sc, to Y.
- Publication:
-
3rd Photovoltaic Solar Energy Conference
- Pub Date:
- 1981
- Bibcode:
- 1981pvse.conf..851M
- Keywords:
-
- Metal Films;
- Mis (Semiconductors);
- Solar Cells;
- Work Functions;
- Beryllium;
- Hafnium;
- Open Circuit Voltage;
- Quartz;
- Reactivity;
- Scandium;
- Short Circuits;
- Thickness;
- Transmittance;
- Transparence;
- Yttrium;
- Electronics and Electrical Engineering