Doping of silicon by laser-induced diffusion

The redistribution of arsenic atoms implanted at low energy into silicon damaged by high-energy ion bombardment has been studied using the Rutherford backscattering techniques with the objective of developing a vacuum-free laser-induced doping procedure. Uniform dopant distributions have been achieved by predamaging the silicon surface layers by ion bombardment. An attempt to adopt a conventional emulsion-doping procedure to laser-induced diffusion is also discussed.