Application of transistor emitter-open turn-off scheme to high voltage power inverters
Abstract
Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.
- Publication:
-
PESC 1981; Power Electronics Specialists Conference
- Pub Date:
- 1981
- Bibcode:
- 1981ppes.conf..252C
- Keywords:
-
- Electric Power Supplies;
- High Voltages;
- Power Conditioning;
- Power Supply Circuits;
- Static Inverters;
- Transistor Circuits;
- Electronic Control;
- Emitters;
- Network Synthesis;
- Off-On Control;
- Waveforms;
- Electronics and Electrical Engineering