Properties of high-efficiency X-band GaAs IMPATT diodes
Abstract
Several different IMPATT diode structures operating in the precollection mode at X-band (9 to 11 GHz) are examined, both using a complete finite-difference program and a simplified analysis which is developed in the report. The details of the precollection mode are examined, and large-signal solutions are presented for each different structure. Both single- and double-drift diodes are considered. Dynamic temperature effects are included and the differences between simulations at constant temperature and those with variable temperature are noted.
- Publication:
-
Michigan Univ. Final Report
- Pub Date:
- June 1981
- Bibcode:
- 1981muaa.reptR....M
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Superhigh Frequencies;
- Computerized Simulation;
- Efficiency;
- Finite Difference Theory;
- Temperature Effects;
- Electronics and Electrical Engineering