Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation
Abstract
Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.
- Publication:
-
SOUTHEASTCON 1981; Proceedings of the Region 3 Conference and Exhibit
- Pub Date:
- 1981
- Bibcode:
- 1981ieee.conf..392S
- Keywords:
-
- Anodic Stripping;
- Electrical Properties;
- Epitaxy;
- Gallium Arsenides;
- Microwave Circuits;
- Oxidation;
- Schottky Diodes;
- Film Thickness;
- Millimeter Waves;
- Mixing Circuits;
- Radio Receivers;
- Semiconducting Films;
- Submillimeter Waves;
- Electronics and Electrical Engineering