High-temperature Complementary Metal Oxide Semiconductors (CMOS)
Abstract
The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.
- Publication:
-
High-Temperature Electronics
- Pub Date:
- 1981
- Bibcode:
- 1981hte..conf..101M
- Keywords:
-
- Cmos;
- Dielectrics;
- High Temperature Environments;
- Inverted Converters (Dc To Ac);
- Leakage;
- Silicon;
- Diodes;
- Gates (Circuits);
- Transistor Logic;
- Wafers;
- Electronics and Electrical Engineering