Basic problems in InP Technology
Abstract
The growth and characteristics of high purity epitaxial InP layers grown by liquid phase epitaxy are described. Silicon and sulfur will be the dominant residual donors in LPE grown InP. Techniques to reduce the residual donor concentration in the LPE layers are discussed. Chemical polishing the mesa etching of InP and ohmic contact studies to n and p type InP are discussed. Preliminary investigations show that at power densities of 50,000 W per sq cm, permanent laser induced surface damage occurs in InP. Thus laser annealed ohmic contacts need to be formed at power densities 50,000 W per sq cm. Severe surface degradation was observed in SiO2 encapsulated, ion implanted InP samples a&nealed at 700 C. The use of phosphorus doped glass (PSG) dramatically reduces such surface degradation. The glass (PSG) dramatically reduces such surface degradation. The electrical properties of Be and Si implanted layers are reported as functions of both implantation dose and anneal temperature. Preliminary secondary ion mass spectrometry (SIMS) studies show that at high concentrations dramatic redistribution effects occur in Be implanted and annealed InP, while no significant diffusion occurs in Si implanted and annealed InP.
- Publication:
-
Final Report
- Pub Date:
- March 1981
- Bibcode:
- 1981hrl..reptQ....V
- Keywords:
-
- Degradation;
- Indium Phosphides;
- Liquid Phase Epitaxy;
- Semiconductors (Materials);
- Crystal Lattices;
- Crystal Structure;
- Gallium Arsenides;
- Ion Implantation;
- Mass Spectroscopy;
- Solid-State Physics