Advanced TELD/FET technology
Abstract
Planar TELDs have been designed, fabricated, and tested. Computer models have been developed for designing and predicting the characteristics of TELDs as a function of device geometry, material parameters, and bias conditions. TELDs have been fabricated on ion-implanted LPE and VPE GaAs. Frequency dividers that divide the input signal by any integer from two through nine have been realized. A process technology for fabricating TELD/FET circuits was developed and test circuits fabricated incorporating this technology. Because of the relatively low doping density requirements for TELDs, material reproducibility was not sufficient to obtain repeatable results and the current loop was not satisfactory for successful operation of the circuits.
- Publication:
-
Final Report
- Pub Date:
- April 1981
- Bibcode:
- 1981hrl..rept.....G
- Keywords:
-
- Field Effect Transistors;
- Frequency Dividers;
- Gunn Effect;
- Logic Circuits;
- Mathematical Models;
- Schottky Diodes;
- Computerized Simulation;
- Gallium Arsenides;
- Gates (Circuits);
- Integrated Circuits;
- Ion Implantation;
- Semiconductor Devices;
- Electronics and Electrical Engineering