Broad-band tunable GaAs-FET oscillator with hybrid-coupled microstrip and evanescent-mode resonators
Abstract
An integrated GaAs-FET oscillator has been developed which provides inexpensive tuning of the oscillation frequency over a frequency range of 950 MHz with little power variation and good efficiency around 8 GHz. This was achieved by coupling the microstrip-mounted FET to an evanescent-mode cavity, which is part of the microstrip box. In a modified version, a varactor diode has been mounted into such an oscillator, permitting additional electronic tuning over 1 GHz around 6 GHz.
- Publication:
-
10th European Microwave Conference
- Pub Date:
- 1981
- Bibcode:
- 1981eumw.conf..709J
- Keywords:
-
- Cavity Resonators;
- Coupled Modes;
- Field Effect Transistors;
- Gallium Arsenides;
- Hybrid Circuits;
- Microstrip Devices;
- Microwave Oscillators;
- Network Synthesis;
- Broadband;
- Integrated Circuits;
- Low Weight;
- Tuning;
- Varactor Diodes;
- Electronics and Electrical Engineering