50-50 ohm packaged GaAs FET for X and Ku bands
Abstract
It is noted that when packaged FETs are used above 8 GHz, parasitic reaction, increased input-output VSWR and matching circuit losses act to reduce stability, power gain, output power and bandwidth. Medium-power FETs internally matched and self-biased with lumped elements in the X and Ku bands are presented with output powers of 50, 100, and 500 mW. It is shown that the internally matched and packaged FETs make possible low-cost, small hermetic amplifiers without any matching network in the X and Ku bands.
- Publication:
-
10th European Microwave Conference
- Pub Date:
- 1981
- Bibcode:
- 1981eumw.conf..705D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Microwave Circuits;
- Network Analysis;
- Superhigh Frequencies;
- Electric Potential;
- Electronic Packaging;
- Frequency Stability;
- Power Efficiency;
- Power Gain;
- Electronics and Electrical Engineering