GaP Schottky diodes for high temperature applications
Abstract
Four metals were evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000 hours at 275 C. These devices were evaluated considering the barrier height, phi/sub/bn/, and leakage current density, J/sub l/ as a function of aging time. Results indicate that the devices ar dominated by a large surface state density which is partially compensated by prolonged aging. Nickel Schottky diodes emerge as the most stable devices.
- Publication:
-
Presented at Electron. Components Conf
- Pub Date:
- March 1981
- Bibcode:
- 1981elco.conf.....W
- Keywords:
-
- Current Density;
- High Temperature Environments;
- Schottky Diodes;
- Aging (Materials);
- Aluminum;
- Chromium;
- Nickel;
- Platinum;
- Electronics and Electrical Engineering