High speed GaAs static RAM technology and design
Abstract
A design and analysis study of potential high-speed GaAs MESFET memory circuits was performed. The results show that a 1-kbit static RAM having a 1-ns access time is feasible using low-power enhancement-mode MESFETs to realize static flip-flop memory cells; power dissipation would be 5 microwatts per cell. To achieve maximum memory speed, the control and drive circuitry incorporates depletion-mode devices throughout; total power dissipation would be about 1 W. Details of the memory design and analysis are presented.
- Publication:
-
EASCON 1981; Electronics and Aerospace Systems Conventions
- Pub Date:
- 1981
- Bibcode:
- 1981easc.conf...94L
- Keywords:
-
- Access Time;
- Field Effect Transistors;
- Gallium Arsenides;
- Random Access Memory;
- Systems Engineering;
- Technology Assessment;
- Computer Components;
- Design Analysis;
- Energy Dissipation;
- Flip-Flops;
- Metal Surfaces;
- Schottky Diodes;
- Electronics and Electrical Engineering