Technology of radiation resistant MOS devices

During technological processes such as ion doping, plasma corrosion or X-ray lithography, radiation effects can be harmful to MOS devices used in the space, military and nuclear industries. Silicon and silicon dioxide preparation for radiation resistant MOS devices is reviewed. In order to obtain the lowest possible threshold voltage (1-2 V of 1,000,000 rad) the paper stresses the following points: (1) the silicon must be of the (100) type, (2) the optimum oxidation temperature should be between 850-1000 C, while the sintering temperature should be between 460-500 C, (3) aluminum doping can be useful and (4) thermal stabilization can also help avoid irradiation effects.