Topography of the electrical properties of the silicon/oxide interface and the influence of technologic treatments
Abstract
Using the experience in automatic measurements of the parameters, turning point voltage, density of surface states and relaxation time of a MOS-capacitor the following methods were developed or improved by: simultaneous measurement of relaxation time and bulk lifetime at the same spot of a wafer; separation of the contributions to the relaxation time from bulk and surface generation; and automatic measurement of break down voltage and behavior under high voltage stress at room temperature. To explain the behavior of SiO2 layers under voltage-stress at normal and elevated temperature, additional measurements of fluctuations of the surface potential (caused by fixed oxide-charge) are presented.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- February 1981
- Bibcode:
- 1981STIN...8215301B
- Keywords:
-
- Electrical Properties;
- Interfaces;
- Silicon Dioxide;
- Topography;
- Boundaries;
- High Voltages;
- Molecular Relaxation;
- Relaxation Time;
- Electronics and Electrical Engineering