Barrier-controlled current conduction in field-controlled thyristors
Abstract
An empirical analysis of the current conduction in field controlled thyristors under channel barrier height controlled current flow has been performed. This analysis shows that the device current increases exponentially with decreasing gate voltage and increases exponentially as the fifth root of the anode voltage. Based upon this analysis, an expression relating the blocking gain of these devices to the gate voltage and the anode current has been obtained.
- Publication:
-
Solid State Electronics
- Pub Date:
- July 1981
- DOI:
- 10.1016/0038-1101(81)90189-1
- Bibcode:
- 1981SSEle..24..617B
- Keywords:
-
- Electric Fields;
- Electronic Control;
- Thyristors;
- Volt-Ampere Characteristics;
- Aspect Ratio;
- Field Effect Transistors;
- Gates (Circuits);
- Power Gain;
- Instrumentation and Photography