Interface edge effect and its contribution to the frequency dispersion of metal-oxide-semiconductor admittance
Abstract
Room temperature frequency dispersion of the admittance of Metal-Oxide-Semiconductor (MOS) capacitors made on non-degenerate n-type silicon substrate with (111) surface orientation was studied. A simplified lumped equivalent circuit model which takes into account the interface edge effect, i.e. carrier generation-recombination-trapping via interface states near the edge of the surface inversion region, is proposed and found to be in good agreement with experimental data. Our model also suggests another method of calculating the density of interface states. Fundamental properties of interface states are estimated from experimental data. A self-consistency check is made among the values of equivalent circuit elements to substantiate our model.
- Publication:
-
Solid State Electronics
- Pub Date:
- June 1981
- DOI:
- 10.1016/0038-1101(81)90078-2
- Bibcode:
- 1981SSEle..24..569S
- Keywords:
-
- Capacitors;
- Electrical Impedance;
- Electron Recombination;
- Equivalent Circuits;
- Frequency Response;
- Metal Oxide Semiconductors;
- Carrier Density (Solid State);
- Edges;
- Mathematical Models;
- N-Type Semiconductors;
- P-N Junctions;
- Room Temperature;
- Silicon;
- Solid-Solid Interfaces;
- Electronics and Electrical Engineering