Localization and the origin of paramagnetic centers in 1D conductors
Abstract
It is shown that the appearance of paramagnetic centers is an intrinsic property of 1D conductors with static defects of a non-magnetic origin. The concentration of paramagnetic centers is determined by the fact that in the 1D case all electron states in the field of defects are localized and the Coulomb repulsion leads to the appearance of a certain number of single occupied states. Power temperature dependences for a number of thermodynamic quantities, in particular, for susceptibility are obtained
- Publication:
-
Solid State Communications
- Pub Date:
- March 1981
- DOI:
- 10.1016/0038-1098(81)90499-3
- Bibcode:
- 1981SSCom..37..869G