HgCdTe Mid-Wavelength Infrared (MWIR) Epitaxial Mosaics For Tactical Applications
Abstract
Epitaxial HgCdTe/CdTe, combined with ion implantation technology, has proven ideally suited for proposed photodiode focal plane array applications. State-of-the-art performance planar photodiodes have been fabricated in epitaxial materials of all wavelengths. Important applications of these arrays are in tactical defense missions employing MWIR arrays operated at 77K and near 195K. A critical issue for these devices is stability through the bakeout required for the sealing off of dewar packaging. We report measurements of ion-implanted HgCdTe/CdTe devices and arrays which have broadband spectral response (when illuminated through the CdTe) and high RoA values (~ 11 Ω-cm2 at 195K for λc (50%) = 4.35 μmm, > 106 Ω-cm2 at 77K for λc (50%) = 4.7 μm). Stability of both planar and mesa devices and arrays through various bake conditions has been demonstrated.
- Publication:
-
Staring Infrared Focal Plane Technology
- Pub Date:
- July 1981
- DOI:
- 10.1117/12.959907
- Bibcode:
- 1981SPIE..267...18T
- Keywords:
-
- Epitaxy;
- Infrared Imagery;
- Ion Implantation;
- Mercury Cadmium Tellurides;
- Military Technology;
- Mosaics;
- Broadband;
- Cadmium Tellurides;
- Fabrication;
- Focal Plane Devices;
- Focusing;
- Photodiodes;
- Technology Utilization;
- Electronics and Electrical Engineering