Evidence for a Valley-Occupancy Transition in Si Inversion Layers at Low Electron Densities
Abstract
Careful studies of intersubband transition energies versus surface electron density have been made in Si(100) inversion layers. An observed change in slope and shift to higher energies at low densities is consistent with a recent model of a two-valley to one-valley occupancy transition driven by many-body effects.
- Publication:
-
Physical Review Letters
- Pub Date:
- April 1981
- DOI:
- 10.1103/PhysRevLett.46.1096
- Bibcode:
- 1981PhRvL..46.1096C
- Keywords:
-
- 73.40.Qv;
- 71.45.Gm;
- Metal-insulator-semiconductor structures;
- Exchange correlation dielectric and magnetic response functions plasmons