Manufacture and study of Diffused Gallium Arsenide IMPATT Diodes in the Ku-band
Abstract
The theoretical concept of an avalanche diode of the considered type was first discussed by Read (1958). The realization of Read's concept on the basis of gallium arsenide technology by constant et al. (1975) and Bozler et al. (1976) made it finally possible to exceed the device efficiency estimated by Read. However, the manufacture of such diodes on the basis of liquid-phase and vapor-phase epitaxy methods is currently still very difficult. The present investigation is concerned with the employment of a significantly simpler method for the manufacture of GaAs IMPATT Diodes. This method is based on the utilization of a 'paint-on' diffusion process. During the current investigation the new manufacturing method was optimized. It was found to be possible to obtain diodes which, with respect to their efficiency, are comparable with diodes manufactured by means of significantly more complex procedures.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- October 1981
- Bibcode:
- 1981PhDT........43K
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Self Diffusion (Solid State);
- Semiconductors (Materials);
- Superhigh Frequencies;
- Diffusion Theory;
- Electron Diffusion;
- Liquid Phase Epitaxy;
- Manufacturing;
- Technology Assessment;
- Vapor Phase Epitaxy;
- Electronics and Electrical Engineering