Chargebased modeling of capacitance in MOS transistors
Abstract
Conventional transistor models for the transient simulation of MOS circuits are formulated in terms of nonlinear capacitors. A chargebased model was developed to overcome errors and to account for the bulk charge. It is shown that the capacitances between any pair of terminals are nonreciprocal. Bulksource, bulkdrain, and drainsource couplings are modeled, as are gatetobulk capacitances in saturation. The drainsource capacitances are negative. The capacitance characteristics of the model verified experimentally. The impact of the chargebased model on simulation of practical circuits was considered. Although the model is particularly useful in simulating silicononinsulator circuits, it gives improved simulation of bulk MOS technologies as well. Although the derivations are strictly valid only for longchannel devices operating at low speed, the model should prove useful for the simulation of practical circuits using stateoftheart technology. Extensions of the model to shortchannel devices and highspeed operation are discussed.
 Publication:

Ph.D. Thesis
 Pub Date:
 1981
 Bibcode:
 1981PhDT........36W
 Keywords:

 Capacitance;
 Capacitors;
 Computerized Simulation;
 Electric Charge;
 Metal Oxide Semiconductors;
 Transistor Circuits;
 Transistors;
 Computer Programs;
 Electric Current;
 Electric Potential;
 Gates (Circuits);
 Numerical Integration;
 Electronics and Electrical Engineering