Temporal and frequency responses of p-n HgCdTe photodiodes
Abstract
Theoretical expressions for the high-frequency behavior of a p-n photodiode, limited by the RC-time constant and the diffusion time to the junction, are given. Comparisons with temporal and frequency response measurements on an HgCdTe photodiode have been performed. The good agreement between theoretical and experimental data suggests that this type of high-mobility semiconductor photodiode can be described using the derived model, in which a constant, saturated diffusion velocity is assumed.
- Publication:
-
Optical and Quantum Electronics
- Pub Date:
- March 1981
- Bibcode:
- 1981OptQE..13..147L
- Keywords:
-
- Carrier Mobility;
- Frequency Response;
- Mercury Cadmium Tellurides;
- P-N Junctions;
- Photodiodes;
- Time Response;
- Carrier Transport (Solid State);
- Electron Diffusion;
- Shot Noise;
- Time Constant;
- Solid-State Physics