Dispersive transport in hydrogenated a-Si prepared by RF sputtering
Abstract
Time-of-flight measurement of photoexcited carriers has been carried out in hydrogenated a-Si deposited by the RF sputtering method. Both electrons and holes show highly dispersive transport. The electron drift mobility near room temperature ranges from 0.005 to 0.0004 sq cm/V per sec, much lower than that of glow discharge samples, and the activation energy is about 0.3 eV. The value of the hole mobility is comparable with that in glow discharged specimens, but its activation energy is about 0.2 eV, which is about half of that observed in glow discharged a-Si.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- January 1981
- Bibcode:
- 1981JaJAP..20..175S
- Keywords:
-
- Amorphous Semiconductors;
- Carrier Transport (Solid State);
- Hydrogenation;
- Silanes;
- Silicon Films;
- Solar Cells;
- Sputtering;
- Electron Mobility;
- Photoconductivity;
- Radio Frequency Discharge;
- Time Of Flight Spectrometers;
- Solid-State Physics