A large-signal model for the GaAs MESFET
Abstract
An analytic large-signal model for the GaAs FET is described which relates the terminal currents to the instantaneous terminal voltages and their time derivatives. It incorporates the device geometry and semiconductor parameters as well as the device parasitic circuit elements. The model is fast and efficient when implemented on a computer and is in a form suitable for large-signal circuit design and optimization.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- August 1981
- DOI:
- 10.1109/TMTT.1981.1130447
- Bibcode:
- 1981ITMTT..29..781M
- Keywords:
-
- Computer Aided Design;
- Equivalent Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Schottky Diodes;
- Signal Analysis;
- Amplifier Design;
- Mathematical Models;
- Microwave Amplifiers;
- Network Analysis;
- Optimization;
- Power Amplifiers;
- Systems Simulation;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering