20-GHz band monolithic GaAs FET low-noise amplifier
Abstract
A 20-GHz band monolithic GaAs FET low-noise amplifier has been developed. Design and fabrication were performed by obtaining the transmission properties of the microstrip lines on a semi-insulating GaAs substrate. The developed monolithic amplifier consists of a submicron gate GaAs MESFET and the input and output distributed matching circuits on a semi-insulating GaAs substrate measuring 2.75 mm x 1.45 mm. A noise figure of 6.2 dB and an associated gain of 7.5 dB were obtained at 21 GHz without any additional tuning adjustments.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- January 1981
- DOI:
- 10.1109/TMTT.1981.1130277
- Bibcode:
- 1981ITMTT..29....1H
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Low Noise;
- Microwave Amplifiers;
- Fabrication;
- Microstrip Transmission Lines;
- Power Gain;
- Substrates;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Tuning;
- Electronics and Electrical Engineering