High-purity semi-insulating GaAs material for monolithic microwave integrated circuits
Abstract
Liquid-encapsulated Czochralski (LEC) growth of large-diameter bulk GaAs crystals from pyrolytic boron nitride crucibles is shown to yield high crystal purity, stable high resistivities, and predictable direct ion-implantation characteristics. It is also shown that LEC crystals can provide the large-area round (100)-substrates which will be required to realize a reproducible low-breakage GaAs IC technology. The fabrication of 2-in diameter substrates to tight dimensional tolerances with 110-line orientation flats and edge rounding has been demonstrated experimentally.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1981
- DOI:
- Bibcode:
- 1981ITED...28..140H
- Keywords:
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- Crystal Growth;
- Gallium Arsenides;
- Integrated Circuits;
- Ion Implantation;
- Microwave Circuits;
- Semiconductors (Materials);
- Boron Nitrides;
- Electrical Resistivity;
- Encapsulating;
- Fabrication;
- Purity;
- Technology Assessment;
- Electronics and Electrical Engineering