Statistical approach to theory of electronavalanche ionization in solids
Abstract
The development of the electron avalanche induced in solid transparent dielectrics by an electromagnetic field where the deterrent lack of seed electrons can be critical is analyzed. Expressions for the breakdown probability as a function of the laser radiation intensity, the focal spot size, and the concentration of defects are obtained
 Publication:

IEEE Journal of Quantum Electronics
 Pub Date:
 October 1981
 DOI:
 10.1109/JQE.1981.1070641
 Bibcode:
 1981IJQE...17.2023E
 Keywords:

 Dielectrics;
 Electron Avalanche;
 Laser Damage;
 Photoionization;
 Solid State Physics;
 Statistical Analysis;
 Crystal Defects;
 Luminous Intensity;
 Multiphoton Absorption;
 Probability Theory;
 Radiation Damage;
 SolidState Physics