High-performance millimetrewave GaAs Schottky-barrier flip-chip diode
Abstract
The growth in knowledge attained in astronomy as a result of the study of millimeter and submillimeter radio signals has been made possible by the employment of the Schottky-barrier diode with its extreme sensitivity and its capability for low-noise operation. The standard structure of the Schottky-diode chip involves the use of a sharply pointed whisker. This contact whisker can cause operational difficulties. The considered investigation is concerned with the development of a new millimeterwave Schottky-diode structure which eliminates the whisker completely and allows direct bonding of the anode to the RF choke structure. It is shown that the technology for fabrication and mounting a flip-flop diode is practical. Even initial tests under far from ideal conditions yielded reasonable RF data.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1981
- DOI:
- 10.1049/el:19810389
- Bibcode:
- 1981ElL....17..555S
- Keywords:
-
- Chips (Electronics);
- Flip-Flops;
- Gallium Arsenides;
- Millimeter Waves;
- Performance Prediction;
- Schottky Diodes;
- Contact Resistance;
- Fabrication;
- Liquid Phase Epitaxy;
- Low Noise;
- Radio Astronomy;
- Submillimeter Waves;
- Electronics and Electrical Engineering