Transport properties in GaAs-Al/x/Ga/1-x/As heterostructures and MESFET application
Abstract
Mobilities of undoped GaAs-n-doped Al(x)Ga(1-x)As heterostructures are shown to present a maximum as a function of the thickness of the undoped Al(x)Ga(1-x)As spacer layer. This maximum increases as the temperature decreases. The transition temperature above which phonon scattering is dominant decreases as d increases. Heterostructure FETs working at 11 GHz give an 8 dB gain.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1981
- DOI:
- 10.1049/el:19810242
- Bibcode:
- 1981ElL....17..342D
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Schottky Diodes;
- Transport Properties;
- Carrier Mobility;
- Electron Phonon Interactions;
- Hall Effect;
- Temperature Dependence;
- Transition Temperature;
- Electronics and Electrical Engineering