MIC IMPATT diode oscillator stabilised by temperature compensated dielectric resonator
Abstract
Barium nonatitanate resonators offer simple microwave circuit designs for stabilized oscillators. An integrated circuit X-band IMPATT diode oscillator was designed and results are presented for both the stabilized and unstabilized oscillator. There was a considerable improvement in the stabilized oscillator spectrum and temperature sensitivity, e.g. the unstabilized oscillator has a line width of 0.5 MHz at 38 dB below the peak whereas the stabilized oscillator had a 0.5 MHz linewidth at 52 dB below the peak. The temperature sensitivity of the stabilized oscillator was approximately 40 kHz C over the range 0 to 60 C, which was about a third of that of the unstabilized oscillator.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1981
- DOI:
- 10.1049/el:19810052
- Bibcode:
- 1981ElL....17...72M
- Keywords:
-
- Avalanche Diodes;
- Cavity Resonators;
- Frequency Stability;
- Integrated Circuits;
- Microwave Oscillators;
- Temperature Compensation;
- Design Analysis;
- Dielectrics;
- Network Synthesis;
- Signal Stabilization;
- Spectral Sensitivity;
- Superhigh Frequencies;
- Temperature Dependence;
- Electronics and Electrical Engineering