Effect of vacuum annealing cleaning on electrical characteristics of GaAs/1-x/P/x/-Mo Schottky diodes
Abstract
A vacuum annealing procedure for surface cleaning prior to barrier metal evaporation is proposed. The reported method is suitable for III-V compounds and has been checked for GaAs/1-x/P/x/-Mo Schottky diodes. Electrical characteristics of the junctions seem to be best at around 550 C, but for higher temperatures the electrical characteristics degenerate, indicating the incorporation of a surface layer with a high density of defects.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1981
- DOI:
- Bibcode:
- 1981ElL....17...37C
- Keywords:
-
- Annealing;
- Gallium Arsenides;
- Schottky Diodes;
- Surface Finishing;
- Temperature Effects;
- Volt-Ampere Characteristics;
- Cleaning;
- Gallium Phosphides;
- Metal Surfaces;
- Molybdenum;
- Surface Defects;
- Surface Layers;
- Vacuum Effects;
- Electronics and Electrical Engineering