Semiconductor millimeter wavelength electronics
Abstract
This report describes progress and results obtained in the first year of the subject research program. The purpose of the program is to investigate new and innovative approaches to the generation and amplification and detection of electromagnetic signals in the milimeter wave spectrum. It incorporates theoretical and applied studies in four areas: Semiconductor material synthesis and growth; Electrical characterization of these materials; Device modeling and fabrication, and new device concepts. It is our desire to understand more fully the origin and consequences of the physical limitations of semiconductor materials appropriate for use at millimetric wavelengths, and through this knowledge to suggest new materials and/or devices with improved properties. During the period 1 September 1979 to 30 August 1980, we have initiated the growth of heavily doped GaAs, developed an apparatus for the measurement of high field transport properties, examined some impurity effects in GaAs, and laid the theoretical groundwork for a systematic study of inertial effects in semiconductor charge transport, including the concept of Zener oscillations. We have also carried out Gunn oscillator experiments that have yielded power levels of 5-6mWat frequencies near 150 GHz. A new millimeter wave mixer diode configuration is also explored. Progress is summarized in this introductory section. Detailed discussions are presented in the body of the report.
- Publication:
-
Annual Report
- Pub Date:
- October 1980
- Bibcode:
- 1980wusl.rept......
- Keywords:
-
- Electrical Properties;
- Millimeter Waves;
- Semiconductors (Materials);
- Epitaxy;
- Line Spectra;
- Research Management;
- Electronics and Electrical Engineering