Research on InGaAs FETs
Abstract
The fabrication of Schottky-gate field-effect transistors on InGaAs lattice matched to InP is reported. A higher bandgap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given which shows over a factor of two higher saturated velocity for InGaAs in comparison to GaAs.
- Publication:
-
Interim Technical Report
- Pub Date:
- September 1980
- Bibcode:
- 1980vara.reptQ....B
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Compounds;
- Research;
- Schottky Diodes;
- Crystal Lattices;
- Gates (Circuits);
- Research Management;
- Semiconductor Devices;
- Electronics and Electrical Engineering