IC fabrication using electron-beam technology
Abstract
The development of a manufacturing capability for standard bipolar circuits of conventional design using existing e-beam direct writing equipment is described. In particular, a pilot-line demonstration of significant yields of conventional 4 to 5 micrometer design rule integrated circuits which were fully tested to military specifications for performance, quality and reliability is discussed. The vehicle used for this demonstration was a standard TTL 256 bit bipolar RAM using a single level metal, junction isolated, Schottky clamped bipolar process. Emphasis was placed on utilizing a new class of high-speed electron resist in combination with selective plasma etching techniques in order to establish economical next generation very large scale integration processes. A vector scan, laser controlled e-beam direct writing system, developed with fully automatic slice alignment, was used for patterning of these devices. To determine that e-beam direct writing yields devices with no degradation in performance or reliability, optically patterned split lot controls were fabricated in parallel and used for comparative testing.
- Publication:
-
Final Report
- Pub Date:
- February 1980
- Bibcode:
- 1980ti...rept.....V
- Keywords:
-
- Electron Beams;
- Integrated Circuits;
- Microelectronics;
- Printed Circuits;
- Circuit Reliability;
- Electronic Equipment Tests;
- Etching;
- Large Scale Integration;
- Manufacturing;
- Electronics and Electrical Engineering