Monolithic integration of UHF-MOSFET-structures and bipolar UHF transistors

Compatible UHF MOSFET and bipolar monolithic technology for application to FM and television electronic tuners was studied. A UHF MOS tetrode which features very low noise and high transductance, and MOS triodes and UHF bipolar transistors feasible for integration were developed. Both techniques are combined which produces an integrated UHF balanced consisting of two bipolar transistors and one MOS triode using ion implantation techniques. It is demonstrated that dc dynamic, functional measurements take considerable advantage of the BIMOS mixer circuit.