High performance BSF silicon solar cell with fire through contacts printed on AR coating

Low-cost wafer processing techniques are used to fabricate a high-performance silicon solar cell. A doped spin-on diffusion source is prepared by mixing phosphoric-titanate compound into a volatile solvent in order to form an N(+) layer and an antireflection coating for P-type silicon simultaneously. The refractive index of the TiO2 film after diffusion within a temperature range of 900-930 C is approximately 2. The silver paste on the front surface and the aluminum paste on the rear surface are fired simultaneously. The front paste containing 70% lead oxide is able to fire through the TiO2 layer, and shows good ohmic contact and adhesion properties. Conversion efficiencies of 13 and 16% are achieved with 75 mm cells without additional treatment such as soldering.