Laser processing for high-efficiency silicon solar cells
Abstract
The experimental and theoretical aspects of the physics of pulsed laser annealing are reviewed with attention to the application of laser processing to solar cell fabrication. The approaches to junction formation discussed include ion implantation followed by laser annealing, laser-induced diffusion of surface-deposited dopants, laser recrystallization of doped amorphous films, and laser annealing after dopant implantation by glow and corona discharge. Cells made from 15 ohm-cm base material with junctions formed by ion-implantation and laser annealing or by laser-induced diffusion of surface-deposited dopants give 15% AM1 efficiencies without back surface fields or front surface passivation. Radiation from Q-switched lasers can also be used to clean up the emitter region in cells made by conventional thermal diffusion and to control grain boundary diffusion in polycrystalline materials.
- Publication:
-
14th Photovoltaic Specialists Conference
- Pub Date:
- 1980
- Bibcode:
- 1980pvsp.conf..688W
- Keywords:
-
- Energy Conversion Efficiency;
- Fabrication;
- Laser Annealing;
- Production Engineering;
- Silicon Junctions;
- Solar Cells;
- Grain Boundaries;
- Ion Implantation;
- Laser Heating;
- Q Switched Lasers;
- Recrystallization;
- Spectral Sensitivity;
- Surface Diffusion;
- Thermal Diffusion;
- Engineering (General)