Indium phosphide films for photovoltaic devices
Abstract
Indium phosphide films are deposited on coated graphite substrates by the reaction of indium, hydrogen chloride, and phosphine in a gas flow. The important process parameters include the temperature of the substrate, and the flow rates of hydrogen, hydrogen chloride, and phosphine. The rate of indium phosphide nucleation decreases with increasing temperature, and continuous films cannot be obtained at very high temperatures. Schottky barriers prepared from these films are found to exhibit low rectification ratios, high dark currents, and poor photovoltaic response due to grain boundary effects. Thermal oxidation, ruthenium treatment, and nitridation are found to reduce the grain boundary effects and improve the photovoltaic characteristics of the indium phosphide thin-film Schottky barrier devices.
- Publication:
-
14th Photovoltaic Specialists Conference
- Pub Date:
- 1980
- Bibcode:
- 1980pvsp.conf..661C
- Keywords:
-
- Energy Conversion Efficiency;
- Indium Phosphides;
- Photovoltaic Cells;
- Schottky Diodes;
- Thin Films;
- Volt-Ampere Characteristics;
- Energy Technology;
- Grain Boundaries;
- Hydrogen Chlorides;
- Mass Flow Rate;
- Operating Temperature;
- Quality Control;
- Semiconducting Films;
- Solar Cells;
- Temperature Effects;
- Vapor Deposition;
- Energy Production and Conversion