Photoelectronic properties of ternary niobium oxides
Abstract
A series of ternary niobium oxides were prepared and their photoelectronic properties evaluated. When two species of photoactive centers are simultaneously present, the higher flat-band potential appears to dominate. But it is evident that both species contribute their characteristic sets of inter-band transitions to the ensemble. In this respect, these oxide semiconductors behave differently than the conventional, broad-band semiconductors. It would appear that different photoactive centers remain at least partially independent. Hence, for FeNbO4, the data show all the characteristics of the (NbO6) octahedra in addition to all the characteristics of the (FeO6) centers.
- Publication:
-
Unknown
- Pub Date:
- September 1980
- Bibcode:
- 1980pptn.rept.....D
- Keywords:
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- Band Structure Of Solids;
- Lead Oxides;
- Metal Oxide Semiconductors;
- Niobium Oxides;
- Photoelectron Spectroscopy;
- Broadband;
- Energy Gaps (Solid State);
- Impurities;
- Octahedrons;
- Photoelectric Effect;
- Photoelectrons;
- Physics (General)